1EDN7136UXTSA1 vs 1EDN7116GXTMA1 Perbandingan
Perbandingan bersamaan detil 1EDN7136UXTSA1 dari Infineon dan 1EDN7116GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7136UXTSA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | High-side / Low-side gate driver IC | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Jumlah Output | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | 2 A (typ) |
| Peak Sink Current | 2 A | 4 A (typ) |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | 9 ns |
| Rentang Suhu Kerja | -40 C to +150 C | -40 °C to +125 °C |
| Paket | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes (per Infineon product family convention) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | MSL3 |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |