2ED2103S06FXUMA1 vs 2EDL6014ACG2DXTMA1 Perbandingan

Perbandingan bersamaan detil 2ED2103S06FXUMA1 dari Infineon dan 2EDL6014ACG2DXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2103S06FXUMA1 2EDL6014ACG2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-8-69 (DSO-8 with exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40C to +125C —
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
Konfigurasi Output — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Suhu Kerja — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon