2ED2103S06FXUMA1 vs 2EDL6014ACG2DXTMA1 比較

詳細並排比較 2ED2103S06FXUMA1 由 Infineon 與 2EDL6014ACG2DXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2103S06FXUMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封裝 PG-DSO-8-69 (DSO-8 with exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
輸出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作溫度 — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

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