2ED2103S06FXUMA1 vs 2EDL8034G4CXTMA1 Perbandingan

Perbandingan bersamaan detil 2ED2103S06FXUMA1 dari Infineon dan 2EDL8034G4CXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2103S06FXUMA1 2EDL8034G4CXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Configuration Non-Inverting Non-Inverting
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V 120 V
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-8-69 (DSO-8 with exposed pad) PG-VDSON-10-2 (DSN-10) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40C to +125C —
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Status RoHS Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Peak Source Current — 3 A
Peak Sink Current — 4 A
Jumlah Output — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Suhu Hubung Kerja — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

Spek dan Sumber

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