2ED2103S06FXUMA1 vs 2EDL8034G4CXTMA1 比較

詳細並排比較 2ED2103S06FXUMA1 由 Infineon 與 2EDL8034G4CXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 啟用中
Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 啟用中

規格比較

參數 2ED2103S06FXUMA1 2EDL8034G4CXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver —
Configuration Non-Inverting Non-Inverting
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V 120 V
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封裝 PG-DSO-8-69 (DSO-8 with exposed pad) PG-VDSON-10-2 (DSN-10) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C —
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Peak Source Current — 3 A
Peak Sink Current — 4 A
輸出數量 — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
工作接面溫度 — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

資料表與資源

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