2ED2106S06FXUMA1 vs IRS2104STRPBF Perbandingan

Perbandingan bersamaan detil 2ED2106S06FXUMA1 dari Infineon dan IRS2104STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2106S06FXUMA1 IRS2104STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A 0.29 A
Sink Current (typ.) 0.7 A 0.6 A
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 150 ns
Jumlah Output 2 (1 high-side, 1 low-side) —
Number of Drivers 2 —
Jumlah Pin 8 —
Paket PG-DSO-8-69 (DSO-8) 8-Lead SOIC (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Bootstrap Diode Integrated —
Rentang Suhu Kerja -40C to +125C —
Packaging Tape & Reel —
Tipe Output Half-Bridge, Non-Inverting —
Product Type — Half-Bridge Gate Driver IC
Topologi — Half-Bridge (High-Side + Low-Side)
Number of Channels — 2 (HS + LS, dependent)
High-Side Offset Voltage (VS) — -5 V to +600 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Rise Time (typ.) — 35 ns
Fall Time (typ.) — 70 ns
Quiescent Current (typ.) — 150 uA
Undervoltage Protection — Yes (VCC and VBS UVLO)
Shutdown Pin — Yes (SD, active-low per typical usage)
Logic Input Compatibility — Standard CMOS / LSTTL
Suhu Hubung Kerja — -40C to +150C
Level MSL — 2 (1 year floor life per datasheet)
Qualification Level — Industrial
Status RoHS — Compliant (PbF suffix)

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