2ED2738S01GXTMA1 vs IRS2110SPBF Perbandingan

Perbandingan bersamaan detil 2ED2738S01GXTMA1 dari Infineon dan IRS2110SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2738S01GXTMA1 IRS2110SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
Jumlah Output 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL TTL / CMOS with hysteresis
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated —
Suhu Kerja -40C to +125C —
Paket PG-VSON-10-5 (3x3 mm) with EP 16-SOIC (SOIC-16 W)
Tipe Mounting Surface Mount Surface Mount
Level MSL 2 (1 year) 3
Status RoHS Compliant Compliant (Pb-free)
Driver Type — High and Low Side, Half-Bridge
Number of Drivers — 2
Konfigurasi Output — Non-Inverting
Peak Source/Sink Current — 2.5 A / 2.5 A
Offset Voltage (High-Side) — Up to 500 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (25 V abs max)
Propagation Delay (typ.) — 120 ns
Rise Time (typ.) — 25 ns
Fall Time (typ.) — 17 ns
Undervoltage Lockout — Yes (VCC and VBS)
Rentang Suhu Kerja — -40 C to +125 C

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