2ED2738S01GXTMA1 vs IRS2110SPBF 比較

詳細並排比較 2ED2738S01GXTMA1 由 Infineon 與 IRS2110SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2738S01GXTMA1 2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 ✓ 啟用中

規格比較

參數 2ED2738S01GXTMA1 IRS2110SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
輸出數量 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL TTL / CMOS with hysteresis
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated —
工作溫度 -40C to +125C —
封裝 PG-VSON-10-5 (3x3 mm) with EP 16-SOIC (SOIC-16 W)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 (1 year) 3
RoHS 狀態 Compliant Compliant (Pb-free)
Driver Type — High and Low Side, Half-Bridge
Number of Drivers — 2
輸出配置 — Non-Inverting
Peak Source/Sink Current — 2.5 A / 2.5 A
Offset Voltage (High-Side) — Up to 500 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (25 V abs max)
Propagation Delay (typ.) — 120 ns
Rise Time (typ.) — 25 ns
Fall Time (typ.) — 17 ns
Undervoltage Lockout — Yes (VCC and VBS)
工作溫度範圍 — -40 C to +125 C

資料表與資源

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