2EDN7533RXTMA1 vs 1EDN7146UXTSA1 Perbandingan

Perbandingan bersamaan detil 2EDN7533RXTMA1 dari Infineon dan 1EDN7146UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDN7533RXTMA1 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Dual-channel low-side gate driver —
Number of Channels 2 —
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns —
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V —
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
Suhu Hubung Kerja -40 C to +150 C —
Paket PG-TSSOP-8 (HTSSOP) with exposed pad PG-VSON-1 (6-pin with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Waktu naik — [DATA_NEEDED: typical rise time ns]
Waktu Menurun — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Rentang Suhu Kerja — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
Level MSL — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

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