2EDN7533RXTMA1 vs 1EDN7146UXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDN7533RXTMA1 disebabkan oleh Infineon dan 1EDN7146UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDN7533RXTMA1 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Dual-channel low-side gate driver —
Number of Channels 2 —
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns —
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V —
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
Suhu Hubungan Operasi -40 C to +150 C —
Kemasan PG-TSSOP-8 (HTSSOP) with exposed pad PG-VSON-1 (6-pin with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Masa Pertambahan — [DATA_NEEDED: typical rise time ns]
Masa jatuh — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Gambaran Suhu Operasi — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
Aras MSL — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

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