2EDN7533RXTMA1 vs 1EDN7146UXTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2EDN7533RXTMA1 sa pamamagitan ng Infineon at 1EDN7146UXTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | 2EDN7533RXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Fungsi | Dual-channel low-side gate driver | — |
| Number of Channels | 2 | — |
| Input Polarity | Inverting | — |
| Peak Source/Sink Output Current | 5 A | — |
| Output Resistance (Pull-up, typ.) | 0.5 ohm | — |
| Output Resistance (Pull-down, typ.) | 0.3 ohm | — |
| Propagation Delay (typ.) | 19 ns | — |
| Channel-to-Channel Delay Matching | 1.3 ns (typ.) | — |
| Rise/Fall Time | 1.7 ns / 1.5 ns (typ., 1 nF load) | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V | — |
| Supply Voltage VDD (recommended) | 4.5 V to 20 V | — |
| Supply Voltage VDD (absolute max) | 25 V | — |
| Under-Voltage Lockout | Yes (per channel) | — |
| Temperature ng Junction na Operasyon | -40 C to +150 C | — |
| Packhaging | PG-TSSOP-8 (HTSSOP) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Oras ng Pagtaas | — | [DATA_NEEDED: typical rise time ns] |
| Time ng Pagbaba | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Hanay ng Temperature na Operasyon | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Topology Support | — | Half-bridge, low-side, high-side |