2N7002-7-F vs 2N7002H6327XTSA2 Perbandingan
Perbandingan bersamaan detil 2N7002-7-F dari Diodes Incorporated dan 2N7002H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | 2N7002-7-F | 2N7002H6327XTSA2 |
|---|---|---|
| Merek | Diodes Incorporated | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel Enhancement-Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 115 mA | — |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA | — |
| Power Dissipation (PD) at Ta | 370 mW | — |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical value] |
| Paket | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj / TA operating range] | -55C to +150C (Tj) |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge typical] | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | [DATA_NEEDED: Ciss] |
| Status RoHS | Compliant | Compliant |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) | — |
| Channel Mode | Enhancement | Enhancement |
| Technology | Trench MOSFET | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Qualification | — | Industrial / Commercial Grade |