2N7002-7-F vs 2N7002H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002-7-F disebabkan oleh Diodes Incorporated dan 2N7002H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002-7-F 2N7002H6327XTSA2
Merek Diodes Incorporated Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement-Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical value]
Kemasan SOT-23-3 (TO-236) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj / TA operating range] -55C to +150C (Tj)
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] [DATA_NEEDED: Ciss]
Status RoHS Compliant Compliant
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement Enhancement
Technology Trench MOSFET OptiMOS (Planar)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 300 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Qualification — Industrial / Commercial Grade

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