2N7002L vs 2N7002LT1G Perbandingan

Perbandingan bersamaan detil 2N7002L dari onsemi dan 2N7002LT1G dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2N7002L 2N7002LT1G
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET MOSFET
Tipe Mounting Surface Mount Surface Mount
Paket SOT-23 (SOT-23-3) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi onsemi (ON Semiconductor)
Status RoHS [DATA_NEEDED: RoHS status] —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Jumlah Pin — 3
Kategori — Small Signal MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

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