2N7002L vs 2N7002LT1G Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2N7002L sa pamamagitan ng onsemi at 2N7002LT1G sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2N7002L 2N7002LT1G
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET MOSFET
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging SOT-23 (SOT-23-3) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi onsemi (ON Semiconductor)
Tindminan RoHS [DATA_NEEDED: RoHS status] —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Bilang ng Pins — 3
Kategorya — Small Signal MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

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