2N7002L vs BSS169H6327XTSA1 Perbandingan
Perbandingan bersamaan detil 2N7002L dari onsemi dan BSS169H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 2N7002L | BSS169H6327XTSA1 |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | 170 mA (Ta) |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | Pinch-off approx. -3.5 V (typical) |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | 360 mW (Ta) |
| Technology | High cell density trench MOSFET | Depletion-mode vertical DMOS |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | SOT-23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| FET Type | — | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: junction/ambient operating temperature range] |
| Jumlah Pin | — | 3 |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |