2N7002L vs BSS169H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002L disebabkan oleh onsemi dan BSS169H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002L BSS169H6327XTSA1
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) 170 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V Pinch-off approx. -3.5 V (typical)
Power Dissipation (PD) 200 mW (Ta), 225 mW max 360 mW (Ta)
Technology High cell density trench MOSFET Depletion-mode vertical DMOS
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
FET Type — N-Channel Depletion Mode
Drain-to-Source Voltage (VDS) — 100 V
RDS(on) Maximum — 6 Ohm at VGS=0 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute maximum rating]
Gambaran Suhu Operasi — [DATA_NEEDED: junction/ambient operating temperature range]
Kiraan Pin — 3
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Drain Current at 25C — 170 mA continuous
Typical RDS(on) — [DATA_NEEDED: typical RDS(on) value]

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