2N7002LT1G vs 2N7002H6327XTSA2 Perbandingan
Perbandingan bersamaan detil 2N7002LT1G dari onsemi dan 2N7002H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 2N7002LT1G | 2N7002H6327XTSA2 |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | Enhancement |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Paket | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Kategori | Small Signal MOSFET | — |
| Technology | MOSFET | OptiMOS (Planar) |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55C to +150C (Tj) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Qualification | — | Industrial / Commercial Grade |