2N7002LT1G vs 2N7002H6327XTSA2 比較
詳細並排比較 2N7002LT1G 由 onsemi 與 2N7002H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2N7002LT1G | 2N7002H6327XTSA2 |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | Enhancement |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| 封裝 | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| 類別 | Small Signal MOSFET | — |
| Technology | MOSFET | OptiMOS (Planar) |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +150C (Tj) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Qualification | — | Industrial / Commercial Grade |