2N7002LT1G vs 2N7002L Perbandingan
Perbandingan bersamaan detil 2N7002LT1G dari onsemi dan 2N7002L dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 2N7002LT1G | 2N7002L |
|---|---|---|
| Merek | onsemi | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Paket | SOT-23-3 (TO-236) | SOT-23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Kategori | Small Signal MOSFET | — |
| Technology | MOSFET | High cell density trench MOSFET |
| Manufacturer | onsemi (ON Semiconductor) | onsemi |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Tipe Transistor | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.5 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |