AT45DB041D-SU vs W25M512JVEIQ Perbandingan

Perbandingan bersamaan detil AT45DB041D-SU dari Renesas Electronics dan W25M512JVEIQ dari Winbond. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum AT45DB041D-SU W25M512JVEIQ
Merek Renesas Electronics Winbond
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DataFLASH NOR FLASH - NOR Memory IC (Multichip Package)
Memory Format FLASH —
Density 4 Mbit (4,325,376 bits) —
Organisasi 2,048 pages x 264 bytes (binary) or 256 bytes (standard) 64M x 8
Antarmuka SPI, RapidS (SPI modes 0 and 3) SPI, Dual SPI, Quad SPI
Frekuensi Bawah Maximum 66 MHz —
Tegangan Pemuat 2.7 V to 3.6 V —
SRAM Data Buffers 2 x 264 bytes —
Page Program Time [DATA_NEEDED: page program time] —
Endurance 100,000 program/erase cycles per page —
Data Retention 20 years minimum [DATA_NEEDED: Data retention]
Security Register 128 bytes —
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature range]
Paket 8-pin SOIC (150 mil, EIAJ) 8-WSON (8mm x 6mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
Ukuran Memori — 512 Mbit (64 MB)
Max Clock Frequency — 104 MHz
Operating Voltage — 3V / 3.3V
Access Time — 7 ns
Sector Size — 4KB Uniform Sector
Program/Erase Endurance — [DATA_NEEDED: Program/Erase cycles]
Write Protect — Hardware /WP pin
Hold Pin — /HOLD supported
Level MSL — [DATA_NEEDED: Moisture Sensitivity Level]

Spek dan Sumber

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