AT45DB041D-SU vs W25M512JVEIQ 比較

詳細並排比較 AT45DB041D-SU 由 Renesas Electronics 與 W25M512JVEIQ 由 Winbond. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ 啟用中
Winbond
W25M512JVEIQ W25M512JVEIQ - 512Mbit SPI NOR Flash 104MHz | Winbond

W25M512JVEIQ - 512Mbit SPI NOR Flash 104MHz | Winbond

W25M512JVEIQ ✓ 啟用中

規格比較

參數 AT45DB041D-SU W25M512JVEIQ
品牌 Renesas Electronics Winbond
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DataFLASH NOR FLASH - NOR Memory IC (Multichip Package)
Memory Format FLASH —
Density 4 Mbit (4,325,376 bits) —
組織 2,048 pages x 264 bytes (binary) or 256 bytes (standard) 64M x 8
介面 SPI, RapidS (SPI modes 0 and 3) SPI, Dual SPI, Quad SPI
最大時脈頻率 66 MHz —
供應電壓 2.7 V to 3.6 V —
SRAM Data Buffers 2 x 264 bytes —
Page Program Time [DATA_NEEDED: page program time] —
Endurance 100,000 program/erase cycles per page —
Data Retention 20 years minimum [DATA_NEEDED: Data retention]
Security Register 128 bytes —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature range]
封裝 8-pin SOIC (150 mil, EIAJ) 8-WSON (8mm x 6mm) with exposed pad
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
記憶體容量 — 512 Mbit (64 MB)
Max Clock Frequency — 104 MHz
Operating Voltage — 3V / 3.3V
Access Time — 7 ns
Sector Size — 4KB Uniform Sector
Program/Erase Endurance — [DATA_NEEDED: Program/Erase cycles]
Write Protect — Hardware /WP pin
Hold Pin — /HOLD supported
MSL 等級 — [DATA_NEEDED: Moisture Sensitivity Level]

資料表與資源

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