AT45DB041E vs AT45DB041D-SU Perbandingan

Perbandingan bersamaan detil AT45DB041E dari Renesas Electronics dan AT45DB041D-SU dari Renesas Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Renesas Electronics
AT45DB041E AT45DB041E - 4Mbit SPI DataFlash 85MHz 1.65V | Renesas

AT45DB041E - 4Mbit SPI DataFlash 85MHz 1.65V | Renesas

AT45DB041E ✓ Aktif
Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum AT45DB041E AT45DB041D-SU
Merek Renesas Electronics Renesas Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Memory Capacity 4 Mbit (512 KB) —
Tipe Memori Flash - DataFlash (SPI NOR) DataFLASH NOR
Antarmuka SPI Serial (RapidS) SPI, RapidS (SPI modes 0 and 3)
Frekuensi Bawah Maximum 85 MHz 66 MHz
Supply Voltage Range 1.65 V to 3.6 V —
Page Size 264 bytes —
Number of Pages 2048 —
SRAM Data Buffers 2 x 264 bytes 2 x 264 bytes
Erase Granularity Page / Block (8 pages) / Sector —
Paket 8-SOIC (208 mil) 8-pin SOIC (150 mil, EIAJ)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Write Protection Hardware /WP pin + software sector protection —
Access Type Sequential access (DataFlash architecture) —
Typical Applications Digital voice, image, program code, data storage —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Memory Format — FLASH
Density — 4 Mbit (4,325,376 bits)
Organisasi — 2,048 pages x 264 bytes (binary) or 256 bytes (standard)
Tegangan Pemuat — 2.7 V to 3.6 V
Page Program Time — [DATA_NEEDED: page program time]
Endurance — 100,000 program/erase cycles per page
Data Retention — 20 years minimum
Security Register — 128 bytes
Lead-Free — Yes

Spek dan Sumber

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