AT45DB041E vs AT45DB041D-SU 比較

詳細並排比較 AT45DB041E 由 Renesas Electronics 與 AT45DB041D-SU 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Renesas Electronics
AT45DB041E AT45DB041E - 4Mbit SPI DataFlash 85MHz 1.65V | Renesas

AT45DB041E - 4Mbit SPI DataFlash 85MHz 1.65V | Renesas

AT45DB041E ✓ 啟用中
Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ 啟用中

規格比較

參數 AT45DB041E AT45DB041D-SU
品牌 Renesas Electronics Renesas Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Memory Capacity 4 Mbit (512 KB) —
記憶體類型 Flash - DataFlash (SPI NOR) DataFLASH NOR
介面 SPI Serial (RapidS) SPI, RapidS (SPI modes 0 and 3)
最大時脈頻率 85 MHz 66 MHz
Supply Voltage Range 1.65 V to 3.6 V —
Page Size 264 bytes —
Number of Pages 2048 —
SRAM Data Buffers 2 x 264 bytes 2 x 264 bytes
Erase Granularity Page / Block (8 pages) / Sector —
封裝 8-SOIC (208 mil) 8-pin SOIC (150 mil, EIAJ)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Write Protection Hardware /WP pin + software sector protection —
Access Type Sequential access (DataFlash architecture) —
Typical Applications Digital voice, image, program code, data storage —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Memory Format — FLASH
Density — 4 Mbit (4,325,376 bits)
組織 — 2,048 pages x 264 bytes (binary) or 256 bytes (standard)
供應電壓 — 2.7 V to 3.6 V
Page Program Time — [DATA_NEEDED: page program time]
Endurance — 100,000 program/erase cycles per page
Data Retention — 20 years minimum
Security Register — 128 bytes
Lead-Free — Yes

資料表與資源

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