BSC010NE2LSIATMA1 vs BSC009NE2LSATMA1 Perbandingan
Perbandingan bersamaan detil BSC010NE2LSIATMA1 dari Infineon dan BSC009NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC010NE2LSIATMA1 | BSC009NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Paket | PG-TDSON-8-7 (TDSON-8 EP) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | MOSFET (Metal Oxide) |
| Rentang Suhu Kerja | -55C to +150C (TJ) | -55C to +150C (TJ) |
| Jumlah Pin | 8 | 8 |
| Status RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at T_a | — | 41 A |
| Continuous Drain Current (I_D) at T_c | — | 100 A (Mouser listing), 255 A pulsed (DigiKey) |
| Pulsed Drain Current (I_DM) | — | 255 A |
| R_DS(on) Max @ V_GS=10V | — | 0.9 mOhm |
| Power Dissipation (T_a) | — | 2.5 W |
| Power Dissipation (T_c) | — | 96 W |
| Gate Threshold Voltage V_GS(th) Typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Paket / Case | — | PG-TDSON-8-7 (TDSON-8 FL) |