BSC010NE2LSIATMA1 vs BSC009NE2LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010NE2LSIATMA1 disebabkan oleh Infineon dan BSC009NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC010NE2LSIATMA1 BSC009NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Kemasan PG-TDSON-8-7 (TDSON-8 EP) —
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) MOSFET (Metal Oxide)
Gambaran Suhu Operasi -55C to +150C (TJ) -55C to +150C (TJ)
Kiraan Pin 8 8
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Aras MSL [DATA_NEEDED: MSL rating] 1
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 25 V
Continuous Drain Current (I_D) at T_a — 41 A
Continuous Drain Current (I_D) at T_c — 100 A (Mouser listing), 255 A pulsed (DigiKey)
Pulsed Drain Current (I_DM) — 255 A
R_DS(on) Max @ V_GS=10V — 0.9 mOhm
Power Dissipation (T_a) — 2.5 W
Power Dissipation (T_c) — 96 W
Gate Threshold Voltage V_GS(th) Typ — [DATA_NEEDED: V_GS(th) typical value]
Kemasan / Case — PG-TDSON-8-7 (TDSON-8 FL)

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