BSC019N08NS5ATMA1 vs BSC074N15NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC019N08NS5ATMA1 dari Infineon dan BSC074N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC019N08NS5ATMA1 BSC074N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 5 (N-channel trench) OptiMOS™ 5 trench
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V [DATA_NEEDED: VGS(th) typ]
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg total]
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Rentang Suhu Kerja -55 C to +150 C [DATA_NEEDED: TJ min/max]
Paket PG-TSON-8-3 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25°C — 114 A
Power Dissition (PD) at TC=25°C — 214 W
On-Resistance RDS(on) max @ VGS=10V — 7.4 mΩ
Body Diode — Integrated

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