BSC019N08NS5ATMA1 vs BSC074N15NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N08NS5ATMA1 sa pamamagitan ng Infineon at BSC074N15NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSC019N08NS5ATMA1 | BSC074N15NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS™ 5 trench |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | 28 A | — |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg total] |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | [DATA_NEEDED: TJ min/max] |
| Packhaging | PG-TSON-8-3 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 7.4 mΩ |
| Body Diode | — | Integrated |