BSC019N08NS5ATMA1 vs BSC074N15NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N08NS5ATMA1 disebabkan oleh Infineon dan BSC074N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC019N08NS5ATMA1 BSC074N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 5 (N-channel trench) OptiMOS™ 5 trench
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V [DATA_NEEDED: VGS(th) typ]
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg total]
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Gambaran Suhu Operasi -55 C to +150 C [DATA_NEEDED: TJ min/max]
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25°C — 114 A
Power Dissition (PD) at TC=25°C — 214 W
On-Resistance RDS(on) max @ VGS=10V — 7.4 mΩ
Body Diode — Integrated

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