BSC027N04LSGATMA1 vs IAUCN04S7L019ATMA1 Perbandingan

Perbandingan bersamaan detil BSC027N04LSGATMA1 dari Infineon dan IAUCN04S7L019ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC027N04LSGATMA1 IAUCN04S7L019ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Dissipasi Listrik (TC=25°C) 83 W —
Rentang Suhu Kerja -55°C to +150°C —
Paket PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-33
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) —
Level MSL 1 1
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Series — OptiMOS™ 7
FET Type — N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) — 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V — 1.91 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: Vgs(th) typical/max value]
Gate Charge (Q<sub>g</sub>) — [DATA_NEEDED: Qg total/nominal value]
Suhu Kerja — -55°C to +175°C (junction)
Power Dissipation (P<sub>D</sub>) — [DATA_NEEDED: Pd max at 25C]
Tahanan Panas, Hubung-lingkungan — [DATA_NEEDED: RthJA value]
Automotive Qualification — AEC-Q101 qualified
Packaging — Tape & Reel (13-inch reel)
Standard Pack Quantity — 5000 pieces
Ordering Code Suffix — ATMA1 (Tape & Reel 13")

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