BSC027N04LSGATMA1 vs IAUCN04S7L019ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N04LSGATMA1 disebabkan oleh Infineon dan IAUCN04S7L019ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC027N04LSGATMA1 IAUCN04S7L019ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Pembuangan Kuasa (TC=25°C) 83 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-33
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) —
Aras MSL 1 1
Status RoHS Compliant Compliant
Boson Bebas Yes —
Series — OptiMOS™ 7
FET Type — N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) — 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V — 1.91 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: Vgs(th) typical/max value]
Gate Charge (Q<sub>g</sub>) — [DATA_NEEDED: Qg total/nominal value]
Suhu Operasi — -55°C to +175°C (junction)
Power Dissipation (P<sub>D</sub>) — [DATA_NEEDED: Pd max at 25C]
Tegangan Panas, Hubungan ke Lingkungan — [DATA_NEEDED: RthJA value]
Automotive Qualification — AEC-Q101 qualified
Packaging — Tape & Reel (13-inch reel)
Standard Pack Quantity — 5000 pieces
Ordering Code Suffix — ATMA1 (Tape & Reel 13")

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