BSC027N10NS5ATMA1 vs BSC118N10NSGATMA1 Perbandingan
Perbandingan bersamaan detil BSC027N10NS5ATMA1 dari Infineon dan BSC118N10NSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC027N10NS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | NRND | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | Trench MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 214 W | — |
| Paket | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj min/max] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Product Family | — | OptiMOS 2 |
| FET Type | — | N-Channel |
| Mode | — | Enhancement (Normal Level) |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Lead Plating | — | Pb-free |
| Bebas Halogen | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |