BSC027N10NS5ATMA1 vs BSC118N10NSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N10NS5ATMA1 disebabkan oleh Infineon dan BSC118N10NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC027N10NS5ATMA1 BSC118N10NSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) Trench MOSFET
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 214 W —
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON EP, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Product Family — OptiMOS 2
FET Type — N-Channel
Mode — Enhancement (Normal Level)
Continuous Drain Current (ID) at Ta=25C — 11 A
Continuous Drain Current (ID) at Tc=25C — 71 A
Power Dissipation (PD) at Tc=25C — 114 W
Suhu Hubungan Operasi — -55 C to +150 C
Lead Plating — Pb-free
Boson Bebas — Yes
JEDEC Qualification — Qualified per target application
Target Application — High-frequency SMPS, synchronous rectification
Gate Charge x RDS(on) FOM — Excellent (per datasheet)

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