BSC035N10NS5ATMA1 vs BSC040N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC035N10NS5ATMA1 dari Infineon dan BSC040N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC035N10NS5ATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC035N10NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS max) 100 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
On-Resistance (RDS(on) max) 3.5 mOhm —
Power Dissipation (TA=25C) 2.5 W —
Power Dissipation (Tc=25C) 156 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Tipe Mounting Surface Mount Surface Mount
Configuration Single N-channel MOSFET —
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C
Gate Drive Logic-level compatible (10V VGS) —
Level MSL [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
Status RoHS Compliant Compliant
Packaging Tape & Reel (T&R) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon