BSC035N10NS5ATMA1 vs BSC040N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC035N10NS5ATMA1 disebabkan oleh Infineon dan BSC040N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC035N10NS5ATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC035N10NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS max) 100 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
On-Resistance (RDS(on) max) 3.5 mOhm —
Power Dissipation (TA=25C) 2.5 W —
Power Dissipation (Tc=25C) 156 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single N-channel MOSFET —
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C
Gate Drive Logic-level compatible (10V VGS) —
Aras MSL [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
Status RoHS Compliant Compliant
Packaging Tape & Reel (T&R) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

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