BSC050N03LSGATMA1 vs IPD35N10S3L26ATMA1 Perbandingan
Perbandingan bersamaan detil BSC050N03LSGATMA1 dari Infineon dan IPD35N10S3L26ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC050N03LSGATMA1 | IPD35N10S3L26ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | IPD35N10S3L26ATMA1 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TO252-3-11 (DPAK-2) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C | — |
| Channel Type | N-Channel | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 | MSL1 (up to 260°C peak reflow) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 35 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | — | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | — | 71 W |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% avalanche tested |
| RoHS / Halogen-Free | — | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg from datasheet] |