BSC050N03LSGATMA1 vs IPD35N10S3L26ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC050N03LSGATMA1 disebabkan oleh Infineon dan IPD35N10S3L26ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC050N03LSGATMA1 IPD35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC050N03LSGATMA1 IPD35N10S3L26ATMA1
Technology OptiMOS 3 (N-channel trench MOSFET) OptiMOS-T (N-channel enhancement mode trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at Tc 80 A —
Continuous Drain Current (ID) at Ta 18 A —
On-State Resistance (RDS(on)) Max at VGS=10V 5 mOhm —
Power Dissipation (PD) at Tc 50 W —
Power Dissipation (PD) at Ta 2.5 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TO252-3-11 (DPAK-2)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C —
Channel Type N-Channel —
Status RoHS Compliant —
Aras MSL 1 MSL1 (up to 260°C peak reflow)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 35 A
Pulsed Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Suhu Hubungan Operasi — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

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