BSC050N04LSGATMA1 vs BSZ120P03NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC050N04LSGATMA1 dari Infineon dan BSZ120P03NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC050N04LSGATMA1 BSZ120P03NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 40 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current at 25C (ID, Ta) 18 A —
Continuous Drain Current at 25C (ID, Tc) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 57 W —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 3 (trench MOSFET) OptiMOS P3
Paket PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C -55C to +150C
Avalanche Energy Rated Yes (single-pulse avalanche) —
Status RoHS Compliant Compliant
Level MSL 1 1
Polarity — P-Channel
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (TA=25C) — -11 A
Continuous Drain Current (TC=25C) — -40 A
Power Dissipation (TA=25C) — 2.1 W
Power Dissipation (TC=25C) — 52 W
On-Resistance RDS(on) max @ VGS=-10V — 12 mOhm
On-Resistance RDS(on) max @ VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage VGS(th) typ — -1.7 V
Lead-Free — Yes
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]

Spek dan Sumber

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