BSC076N04NDATMA1 vs BSC340N08NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC076N04NDATMA1 dari Infineon dan BSC340N08NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC076N04NDATMA1 BSC340N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) —
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W 2.5 W
Power Dissipation (Tc) 65 W 32 W
Technology Trench MOSFET (OptiMOS 3) OptiMOS 3 (N-Channel Trench)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
Suhu Hubung Kerja -55 C to +175 C —
Paket / Case PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
Part Number — BSC340N08NS3GATMA1
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 23 A
Continuous Drain Current (ID, Ta) — 7 A
Pulsed Drain Current (IDM) — 92 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage VGS max — +/- 20 V
Rentang Suhu Kerja — -55C to +150C
Paket — PG-TDSON-8-5 (SuperSO8 5x6)
Level MSL — 1
RoHS / Lead-Free — RoHS compliant, lead-free
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

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