BSC076N04NDATMA1 vs BSC340N08NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N04NDATMA1 disebabkan oleh Infineon dan BSC340N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC076N04NDATMA1 BSC340N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) —
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W 2.5 W
Power Dissipation (Tc) 65 W 32 W
Technology Trench MOSFET (OptiMOS 3) OptiMOS 3 (N-Channel Trench)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan / Case PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
Part Number — BSC340N08NS3GATMA1
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 23 A
Continuous Drain Current (ID, Ta) — 7 A
Pulsed Drain Current (IDM) — 92 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage VGS max — +/- 20 V
Gambaran Suhu Operasi — -55C to +150C
Kemasan — PG-TDSON-8-5 (SuperSO8 5x6)
Aras MSL — 1
RoHS / Lead-Free — RoHS compliant, lead-free
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

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