BSC097N06NSATMA1 vs BSC016N06NSTATMA1 Perbandingan

Perbandingan bersamaan detil BSC097N06NSATMA1 dari Infineon dan BSC016N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC097N06NSATMA1 BSC016N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS
Part Status Active —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Suhu Hubung Kerja -55C to +150C —
Paket / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 5
Status RoHS Compliant Compliant
Level MSL 1 (Unlimited) [DATA_NEEDED: MSL level]
Avalanche Rated Yes (EAS per datasheet) —
Part Number — BSC016N06NSTATMA1
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Paket — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Rentang Suhu Kerja — -55 C to +150 C
Lead-Free — Yes

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