BSC097N06NSATMA1 vs BSC016N06NSTATMA1 比較
詳細並排比較 BSC097N06NSATMA1 由 Infineon 與 BSC016N06NSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC097N06NSATMA1 | BSC016N06NSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 / 外殼 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (Unlimited) | [DATA_NEEDED: MSL level] |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Part Number | — | BSC016N06NSTATMA1 |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | — | 1.6 mOhm |
| Power Dissipation (Tc) | — | 167 W |
| Power Dissipation (Ta) | — | 3 W |
| 封裝 | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 工作溫度範圍 | — | -55 C to +150 C |
| Lead-Free | — | Yes |