BSC097N06NSATMA1 vs BSC016N06NSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC097N06NSATMA1 disebabkan oleh Infineon dan BSC016N06NSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC097N06NSATMA1 BSC016N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS
Part Status Active —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 5
Status RoHS Compliant Compliant
Aras MSL 1 (Unlimited) [DATA_NEEDED: MSL level]
Avalanche Rated Yes (EAS per datasheet) —
Part Number — BSC016N06NSTATMA1
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Kemasan — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Gambaran Suhu Operasi — -55 C to +150 C
Lead-Free — Yes

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