BSC12DN20NS3GATMA1 vs BSC340N08NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC12DN20NS3GATMA1 dari Infineon dan BSC340N08NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC12DN20NS3GATMA1 BSC340N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 200V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 80 V
Continuous Drain Current (ID, Tc) 11.3 A 23 A
Power Dissipation (PD, Tc) 50 W —
Paket PG-TDSON-8-5 PG-TDSON-8-5 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold typical] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Technology OptiMOS power MOSFET OptiMOS 3 (N-Channel Trench)
Status RoHS Compliant —
Level MSL 1 (per JEDEC J-STD-020) 1
Configuration Single N-channel —
Jumlah Pin 8 —
Part Number — BSC340N08NS3GATMA1
Continuous Drain Current (ID, Ta) — 7 A
Pulsed Drain Current (IDM) — 92 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage VGS max — +/- 20 V
Power Dissipation (Tc) — 32 W
Power Dissipation (Ta) — 2.5 W
RoHS / Lead-Free — RoHS compliant, lead-free
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

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