BSC12DN20NS3GATMA1 vs BSC340N08NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC12DN20NS3GATMA1 disebabkan oleh Infineon dan BSC340N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC12DN20NS3GATMA1 BSC340N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 200V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 80 V
Continuous Drain Current (ID, Tc) 11.3 A 23 A
Power Dissipation (PD, Tc) 50 W —
Kemasan PG-TDSON-8-5 PG-TDSON-8-5 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold typical] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Technology OptiMOS power MOSFET OptiMOS 3 (N-Channel Trench)
Status RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020) 1
Configuration Single N-channel —
Kiraan Pin 8 —
Part Number — BSC340N08NS3GATMA1
Continuous Drain Current (ID, Ta) — 7 A
Pulsed Drain Current (IDM) — 92 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage VGS max — +/- 20 V
Power Dissipation (Tc) — 32 W
Power Dissipation (Ta) — 2.5 W
RoHS / Lead-Free — RoHS compliant, lead-free
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

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