BSC155N06NDATMA1 vs IPD5N25S3430ATMA1 Perbandingan
Perbandingan bersamaan detil BSC155N06NDATMA1 dari Infineon dan IPD5N25S3430ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC155N06NDATMA1 | IPD5N25S3430ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC155N06NDATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench) | OptiMOS (planar-trench) |
| Configuration | Dual N-channel MOSFET array | Single, 3-pin (2+Tab) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Rentang Suhu Kerja | -55 C to +175 C | — |
| Paket | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TO252-3-313 (DPAK, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | — |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant (Pb-free plating) | ROHS3 Compliant |
| Lead-Free Plating | Yes | — |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 5 A |
| RDS(on) max @ VGS=10V | — | 430 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | — | 422 pF typical |
| Power Dissipation (PD, Tc=25°C) | — | 41 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Lead Finish | — | Matte Tin (lead-free) |