BSC155N06NDATMA1 vs IPD5N25S3430ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC155N06NDATMA1 disebabkan oleh Infineon dan IPD5N25S3430ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC155N06NDATMA1 IPD5N25S3430ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC155N06NDATMA1 —
Technology OptiMOS 3 (N-channel trench) OptiMOS (planar-trench)
Configuration Dual N-channel MOSFET array Single, 3-pin (2+Tab)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 20 A
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TO252-3-313 (DPAK, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant (Pb-free plating) ROHS3 Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID, Tc=25°C) — 5 A
RDS(on) max @ VGS=10V — 430 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3 V typ / 4 V max
Input Capacitance (Ciss) — 422 pF typical
Power Dissipation (PD, Tc=25°C) — 41 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Lead Finish — Matte Tin (lead-free)

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