BSL207SPH6327XTSA1 vs BSL606SNH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSL207SPH6327XTSA1 dari Infineon dan BSL606SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSL207SPH6327XTSA1 BSL606SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology MOSFET (Metal Oxide) OptiMOS3 trench MOSFET
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) —
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/min]
Paket TSOP-6 (PG-TSOP6-6) PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant (Pb-free plating)
Jumlah Pin 6 —
Tipe Transistor — N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Total Gate Charge (Qg) — 5.6 nC (max)
Rentang Suhu Kerja — -55C to +150C (Tj)
Qualification — AEC-Q101 (Automotive)
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

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