BSL207SPH6327XTSA1 vs BSL606SNH6327XTSA1 比較

詳細並排比較 BSL207SPH6327XTSA1 由 Infineon 與 BSL606SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ 啟用中
Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 ✓ 啟用中

規格比較

參數 BSL207SPH6327XTSA1 BSL606SNH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel —
Technology MOSFET (Metal Oxide) OptiMOS3 trench MOSFET
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) —
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/min]
封裝 TSOP-6 (PG-TSOP6-6) PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
RoHS 狀態 Compliant Compliant (Pb-free plating)
腳位數 6 —
電晶體類型 — N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Total Gate Charge (Qg) — 5.6 nC (max)
工作溫度範圍 — -55C to +150C (Tj)
Qualification — AEC-Q101 (Automotive)
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價