BSL207SPH6327XTSA1 vs BSL606SNH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL207SPH6327XTSA1 disebabkan oleh Infineon dan BSL606SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSL207SPH6327XTSA1 BSL606SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology MOSFET (Metal Oxide) OptiMOS3 trench MOSFET
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) —
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/min]
Kemasan TSOP-6 (PG-TSOP6-6) PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant (Pb-free plating)
Kiraan Pin 6 —
Jenis Transistor — N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Total Gate Charge (Qg) — 5.6 nC (max)
Gambaran Suhu Operasi — -55C to +150C (Tj)
Qualification — AEC-Q101 (Automotive)
Aras MSL — 1 (per JEDEC J-STD-020)

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